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중국 CVD SIC 제조업체, 공급업체, 공장

CVD SiC is a vacuum deposition process used to produce high-purity solid materials. This process is often used in semiconductor manufacturing to form thin films on wafer surfaces. During the chemical vapor deposition (CVD) process for producing silicon carbide (SiC), a substrate is exposed to one or more volatile precursors, which chemically react on the substrate surface to form the desired SiC deposit. Among the various methods for producing SiC, CVD produces products with high uniformity and purity, and offers strong process controllability.


Simply put, CVD SiC refers to SiC produced via the chemical vapor deposition (CVD) process. In this process, gaseous precursors, typically containing silicon and carbon, react in a high-temperature reactor to deposit a thin SiC film onto a substrate. CVD SiC is valued for its exceptional properties, including high thermal conductivity, chemical inertness, mechanical strength, and resistance to thermal shock and wear. These properties make chemical vapor deposited (CVD) silicon carbide (SiC) ideal for demanding applications such as semiconductor manufacturing, aerospace components, armor, and high-performance coatings. This material's exceptional durability and stability under extreme conditions ensure its effectiveness in improving the performance and lifespan of advanced technologies and industrial systems.


CVD SiC materials, due to their unique combination of excellent thermal, electrical, and chemical properties, are well-suited for applications in the semiconductor industry, where high-performance materials are required. Chemical vapor deposited (CVD) silicon carbide (SiC) components are widely used in etching equipment, MOCVD equipment, Si and SiC epitaxy equipment, and rapid thermal processing equipment.


The largest market segment for CVD SiC components is etching equipment components. Due to its low reactivity to chlorine- and fluorine-containing etching gases and its electrical conductivity, CVD silicon carbide (SiC) is an ideal material for components such as focus rings in plasma etching equipment. CVD silicon carbide (SiC) components in etching equipment include focus rings, gas showerheads, trays, edge rings.


Take the focus ring, for example. This critical component is placed outside the wafer and in direct contact with it. Voltage is applied to the ring to focus the plasma passing through it, thereby focusing the plasma on the wafer and improving processing uniformity. Traditionally, focus rings are made of silicon or quartz. However, with the advancement of integrated circuit miniaturization, the demand for and importance of etching processes in integrated circuit manufacturing continues to increase. The power and energy of the plasma used for etching are also increasing, especially in capacitively coupled plasma (CCP) etching equipment, which requires even higher plasma energies. Consequently, focus rings made of silicon carbide are becoming increasingly popular.


Due to the high performance of CVD SiC and its ability to be sliced into very thin sections, it can also benefit sputter targets and all types of electrodes.


Process of Chemical Vapor Deposition (CVD)


CVD is a process that transforms a material from a gas phase to a solid phase, used to form a thin film or coating on a substrate surface. The following are the basic steps in CVD:


1. Substrate Preparation

Choose an appropriate substrate material and perform the appropriate cleaning and surface treating to produce a clean, flat surface with good adhesion.

 

2. Reactive Gas Preparation

Prepare the necessary amount of reactive gas or vapor and inject it into the deposition chamber by some means (gas supply system). The reactive gas can be an organic compound, a metal-organic precursor, inert gas, or other gaseous species.

 

3. Deposition Reaction

If all instrumentation is setup correctly the CVD process will begin under the pre-defined reaction conditions. The reactive gas that has been injected into the chamber will undergo some chemical or physical reaction on the substrate surface to form a deposit onto the substrate surface. The deposit formation can be the result of several types of processes depending on the deposition method, these include vapor-phase thermal decomposition, chemical reaction, sputtering, epitaxial growth, etc.

 

4. Control and Monitoring

At the same time during the deposition process, certain deposition parameters need to be controlled and monitored in real time if the observer wishes to ensure the best possible properties in the film are maintained. These include relevant temperature measurement, pressure monitoring, and regulation of gas flow, all the while aiming to keep the desired reaction conditions stable and constant.


5. Deposition Completion and Post-Processing

When either the deposition time, predetermined thickness, or method selected, is achieved the introduction of the reaction gas can be ceased and deposition process ended. Following the deposition, several pertinent post-processing methods (annealing, structural modifications, surface treatment, etc.) should be performed to improve the film performance/quality.


It's important to note that the specific vapor deposition process can vary depending on the deposition technology, material type, and application requirements. However, the basic process outlined above covers most common vapor deposition steps.


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에지 링

에지 링

Semicorex Edge 링은 전세계 최고의 반도체 팹과 OEM으로 신뢰합니다. Semicorex는 엄격한 품질 관리, 고급 제조 공정 및 응용 프로그램 중심 디자인을 통해 도구 수명을 연장하고 웨이퍼 균일 성을 최적화하며 고급 프로세스 노드를 지원하는 솔루션을 제공합니다.*

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가스 분포판

가스 분포판

CVD SIC로 만들어진 Semicorex 가스 분포판은 혈장 에칭 시스템의 중요한 구성 요소로, 웨이퍼 전반에 걸쳐 균일 한 가스 분산 및 일관된 플라즈마 성능을 보장하도록 설계되었습니다. Semicorex는 고성능 세라믹 솔루션을위한 신뢰할 수있는 선택으로, 고급 반도체 제조의 요구에 맞는 비교할 수없는 재료 순도, 엔지니어링 정밀도 및 신뢰할 수있는 지원을 제공합니다.*.

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솔리드 SiC 샤워 헤드

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솔리드 SiC 샤워 헤드는 반도체 제조의 중요한 구성 요소로, 화학 기상 증착(CVD) 공정용으로 특별히 설계되었습니다. 첨단 재료 기술의 선두주자인 Semicorex는 기판 표면에 전구체 가스의 우수한 분포를 보장하는 고체 SiC 샤워 헤드를 제공합니다. 이러한 정밀도는 고품질의 일관된 처리 결과를 달성하는 데 필수적입니다.**

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CVD SiC 포커스 링

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Semicorex CVD SiC Focus Ring은 화학기상증착(CVD) 공정을 통해 꼼꼼하게 증착되고 기계적으로 가공되어 최종 제품을 완성합니다. 뛰어난 재료 특성을 갖춘 이 제품은 현대 반도체 제조의 까다로운 환경에 없어서는 안 될 제품입니다.**

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에칭 링

에칭 링

CVD SiC로 제작된 Etching Ring은 반도체 제조 공정의 필수 부품으로, 플라즈마 식각 환경에서 탁월한 성능을 발휘합니다. 뛰어난 경도, 내화학성, 열 안정성 및 고순도를 갖춘 CVD SiC는 에칭 공정의 정밀성, 효율성 및 신뢰성을 보장합니다. Semicorex CVD SiC 에칭 링을 선택함으로써 반도체 제조업체는 장비의 수명을 연장하고 가동 중지 시간을 줄이며 제품의 전반적인 품질을 향상시킬 수 있습니다.*

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CVD SiC 샤워 헤드

CVD SiC 샤워 헤드

Semicorex CVD SiC 샤워 헤드는 반도체 식각 장비에 사용되는 핵심 부품으로, 전극 역할과 식각 가스의 통로 역할을 합니다. 까다로운 반도체 응용 분야에서 뛰어난 재료 제어, 고급 처리 기술, 안정적이고 오래 지속되는 성능을 위해 Semicorex를 선택하십시오.*

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Semicorex는 수년 동안 CVD SIC을(를) 생산해 왔으며 중국의 전문 CVD SIC 제조업체 및 공급업체 중 하나입니다. 대량 포장을 제공하는 당사의 고급 내구성 제품을 구매하면 대량의 빠른 배송을 보장합니다. 수년에 걸쳐 우리는 고객에게 맞춤형 서비스를 제공했습니다. 고객은 우리 제품과 우수한 서비스에 만족합니다. 우리는 진심으로 귀하의 신뢰할 수 있는 장기 비즈니스 파트너가 되기를 기대합니다! 우리 공장에서 제품을 구입하는 것을 환영합니다.
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